G 15 Galashev, A. E. Growth of a Si nanocrystal in an oxygen atmosphere. Computer simulation / A. E. Galashev // Crystallography Reports. - 2002. - Vol. 47, Suppliment 1 . - S169-S176 Рубрики: ФИЗИКА Кл.слова (ненормированные): Si NANOCRYSTAL -- ATOMIC-OXYGEN ATMOSPHERE -- INTERNAL STRESSES \\\\Expert2\\NBO\\Crystallography Reports (Кристаллография)\\2002, v. 47, Suppl. 1, p. S169.pdf |