B 22 Bannikov, V. V. Electronic structure, chemical bonding and elastic properties of the first thorium-containing nitride perovskite TaThN3 [Текст] / V. V. Bannikov, I. R. Shein, A. L. Ivanovskii // Physica Status Solidi RRL: Rapid Research Letters. - 2007. - Vol. 1, № 3. - С. 89-91. - Библиогр. : с. 91 (15 назв.) Рубрики: ХИМИЧЕСКИЕ НАУКИ Аннотация: The full-potential linearized augmented plane wave method with the generalized gradient approximation for the exchanged and correlation potential (LAPW-GGA) is used to understan the electronic and elastic properties of the first thoriumcontaining nitride perovskite TaThN3. Total and partial density of states, charge distributions as well as the elastic constants, bulk modulus, compressibility, shear modulus, Young modulus and Poisson ratio are obtained for the first time an analyzed in comparison with cubic ThN. The chemical bonding in TaThN3 is a combination of ionic Th–N and of mixed covalent–ionic Ta–N bonds. The cubic TaThN3 is semiconducting with the direct gap at about 0.65 eV. Полный текст |