Вид документа : Статья из журнала Шифр издания : 54/S 53 Автор(ы) : Shein I. R., Ivanovskii A. L. Заглавие : Electronic band structure and chemical bonding in the new antiperovskites AsNMg3 and SbNMg3 Место публикации : Journal of Solid State Chemistry. - 2004. - V. 177, N 1. - С. 61-64. - ISSN 0022-4596. - ISSN 0022-4596 Примечания : Bibliogr.: p. 64 (26 ref.) ББК : 54 Предметные рубрики: ХИМИЧЕСКИЕ НАУКИ Аннотация: The electronic properties of the new Mg-based antiperovskites AsNMg3 and SbNMg3 are investigated within the ab initio local-density full-potential LMTO-GGA method. Both compounds are ionic wide-gap semiconductors with a direct energy gap at Г of 1.332 eV for AsNMg3 and an indirect energy gap (Г - M transitions) of 0.623 eV for SbNMg3. The valence bands are composed mainly of N 2p and (As, Sb) np states. There is some covalent mixing between Mg-N and Mg-(As, Sb) valence states. The equilibrium values of lattice constants and the bulk modulus were also obtainedThe electronic properties of the new Mg-based antiperovskites AsNMg3 and SbNMg3 are investigated within the ab initio local-density full-potential LMTO-GGA method. Both compounds are ionic wide-gap semiconductors with a direct energy gap at of 1.332 eV for AsNMg3 and an indirect energy gap (M transitions) of 0.623 eV for SbNMg3. The valence bands are composed mainly of N 2p and (As,Sb) np states. There is some covalent mixing between Mg_N and Mg_(As,Sb) valence states. The equilibrium values of lattice constants and the bulk modulus were also obtained. Доп.точки доступа: Ivanovskii, A. L.; Ивановский Александр Леонидович