Вид документа : Статья из журнала Шифр издания : 54/R 42 Автор(ы) : Rempel A. A., Schaefer H.-E. Заглавие : Irradiation-induced atomic defects in SiCstudied by positron annihilation Место публикации : Applied Physics A. - 1995. - Vol. 61. - С. P.51-53: il. Примечания : Bibliogr. : p. 52-53 (11 ref.) ISSN: 1432-0630 ББК : 54 Предметные рубрики: ХИМИЧЕСКИЕ НАУКИ Ключевые слова (''Своб.индексиров.''): карбид кремния--аннигиляция электронно-позитронная Аннотация: The present paper reports on positron lifetime??measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV)electron energies and doses from 1.8 x 10 (17) to 1.9 x 10(19) e/cm 2 as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals??of nitrogen doped (2-3 x 10(18) cm (-3) SiC grown by??a modified Lely technique with hexagonal structure (6H polytype) were used. According to the positron lifetime measurements, very different types of vacancy-like positron traps are introduced??after irradiation with electrons of either low or high??energy. The formation of defect agglomerates and their decay at high temperatures is studied during isochronal annealing and related to earlier studies Держатели документа: Центральная научная библиотека УрО РАН Доп.точки доступа: Schaefer, H.-E.