E 43 Electrochemical nucleation and growth of silicon in the KF-KCl-K2SiF6 melt / Y. P. Zaykov, S. I. Zhuk , A. I. Isakov, O. V. Grishenkova, V. A. Isaev // Journal of Solid State Electrochemistry. - 2015. - Vol. 19, № 5. - С. 1341-1345. - Библиогр.: с. 1345 (36 ref.) Рубрики: ХИМИЧЕСКИЕ НАУКИ Кл.слова (ненормированные): КРЕМНИЙ -- ЭЛЕКТРООСАЖДЕНИЕ -- ЗАРОДЫШЕОБРАЗОВАНИЕ -- РОСТ -- ЦИКЛОТЕТРАФОСФАТ МАРГАНЦА -- ХРОНОАМПЕРОМЕТРИЯ -- КОЭФФИЦИЕНТ ДИФФУЗИИ Аннотация: The work related to the study of the initial stages of the silicon electrodeposition on the glassy carbon electrode in molten KF-KCl-K2SiF6 was performed. The silicon nucleation and growth process was investigated using cyclic voltammetry, chronoamperometry, and scanning electron microscopy. It was shown that the electrocrystallization process occurs by the instantaneous nucleation with diffusion-controlled growth under the studied conditions. The Scharifker-Hills theoretical model was used to calculate the nucleation density and the diffusion coefficient of depositing ions. |