Magnetic effects in the oxidation of silicon

Koplak O. V. Magnetic effects in the oxidation of silicon / O. V. Koplak, R. B. Morgunov, A. L. Buchachenko // JETP Letters. – 2012. – Vol. 96, N 2. – P. 102-104.

Документ доступен в ЦНБ УрО РАН: 

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Год: 

2012

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Рубрики: 

  • Химические науки

Вид издания: 

  • статья из журнала

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Аннотация

Аннотация

The mass spectrometry study has indicated that the magnetic field accelerates the oxidation of the surface of silicon crystals. The oxidation rate also depends on the nuclear spin of silicon: the oxidation rate of atoms with magnetic nuclei (29Si) is almost twice as high as that of atoms with spinless, unmagnetized nuclei (28Si and 30Si). Both effects—magnetic field and magnetic isotope—reliably prove that the oxidation of silicon is a spin-selective reaction involving radicals and radical pairs as intermediate paramagnetic particles. A spin-selective magnetic sensitive oxidation mechanism is discussed.